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Toshiba Memory Corporation Launches New NAND Flash Memory Products for Embedded Applications Supporting High-Speed Data Transfers
Second-generation Serial Interface NAND products with increased performance and capacity added to line-up
- September 26, 2019
Tokyo – Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has launched its second-generation line-up of NAND flash memory products for embedded applications with increased performance and capacity[1] to support high-speed data transfers. The new Serial Interface NAND products are compatible with the widely used Serial Peripheral Interface (SPI) and are suited for a wide range of consumer, industrial and communication applications. Sample shipments start today with mass production scheduled to begin from October onwards.
With the devices getting smaller in IoT and communication applications, demand for large capacity flash memory in small packages that can handle high-speed data transfers with low pin count is increasing. Due to its compatibility with the widely used SPI, the Serial Interface NAND products can be utilized as SLC NAND flash memory products with a low pin count, small package and large capacity.
In order to support high-speed data transfers, the new second-generation Serial Interface NAND products offer improved performance compared to existing first-generation products[1], including 133 megahertz (MHz) operating frequency and program x4 mode. Furthermore, an 8 gigabit (1 gigabyte) [2] device has been added to the line-up to respond to demands for larger memory capacity.
Outline of the New Products
* Table can be scrolled horizontally.
| Product Name | Capacity |
I/O | Voltage | Package | Mass Production |
|---|---|---|---|---|---|
| TC58CVG0S3HRAIJ | 1Gb | x1、x2、x4 | 3.3V | 8pin WSON[3] (6mm x 8mm) |
Oct. 2019 |
| TC58CYG0S3HRAIJ | 1.8V | Oct. 2019 | |||
| TC58CVG1S3HRAIJ | 2Gb | 3.3V | Oct. 2019 | ||
| TC58CYG1S3HRAIJ | 1.8V | Oct. 2019 | |||
| TC58CVG2S0HRAIJ | 4Gb | 3.3V | Oct. 2019 | ||
| TC58CYG2S0HRAIJ | 1.8V | Oct. 2019 | |||
| TH58CVG3S0HRAIJ | 8Gb | 3.3V | Dec. 2019 | ||
| TH58CYG3S0HRAIJ | 1.8V | Dec. 2019 |
Key Features
|
Capacity |
1Gb, 2Gb, 4Gb, 8Gb |
|---|---|
|
Page Sizes |
2KByte (1Gb, 2Gb), 4KByte (4Gb, 8Gb) |
|
Interface |
Serial Peripheral Interface Mode 0, Mode 3 |
|
Power Supply Voltage |
2.7 to 3.6V, 1.7 to 1.95V |
|
Operating Temperature Range |
-40 ℃ to 85 ℃ |
|
Features |
|
Notes
[1] Compared to Toshiba Memory Corporation’s existing first-generation Serial Interface NAND products. Toshiba Memory survey.
[2] Product capacity is identified based on the capacity of memory chip(s) within the product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications.
[3] WSON: Very-Very thin Small Outline No Lead Package
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Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.
